Many people are not very clear about the operation process of magnetron sputtering targets, and they do not understand the work content of magnetron sputtering targets. Here's a brief introduction for everyone. The basic principle of magnetron sputtering is to use the plasma in the Ar- 02 mixture gas under the action of an electric field and an alternating magnetic field to bombard the surface of the target with the accelerated high-energy particles. After the energy exchange, the atoms on the surface of the target deviate from the primary crystal. Get out of the grid and transfer to the substrate surface to form a film.

Magnetron sputtering is characterized by high film formation rate, low substrate temperature, good film adhesion, and large area coating. The technology can be divided into DC magnetron sputtering and RF magnetron sputtering.

Magnetron sputtering is a kind of "high-speed and low-temperature sputtering technology" developed rapidly in the 1970s. Magnetron sputtering forms a quadrature electromagnetic field above the surface of a cathode target. When secondary electrons generated by sputtering are accelerated into high-energy electrons in the cathode drop region, they do not fly directly to the anode, but instead they oscillate about the trochoidal motion under the action of a perpendicular electromagnetic field. High-energy electrons continuously collide with gas molecules and transfer energy to the latter to ionize and become low-energy electrons themselves. These low-energy electrons eventually drift along the magnetic lines of force to the auxiliary anode near the cathode to prevent strong bombardment of the plate by high-energy electrons, eliminating the source of damage caused by bombardment heating and electron irradiation in diode sputtering. The characteristics of "low temperature" plate in magnetron sputtering. Due to the presence of an external magnetic field, the complex motion of electrons increases the ionization rate and enables high-speed sputtering. The technical characteristic of magnetron sputtering is to generate a magnetic field perpendicular to the direction of the electric field at the cathode target surface attachment, which is generally realized by a permanent magnet.