The principle of magnetron sputtering: electrons accelerate in the process of flying to the substrate under the action of an electric field and collide with argon atoms, ionize a large number of argon ions and electrons, and electrons fly to the substrate. The argon ions accelerate the bombardment of the target under the action of an electric field, sputtering a large number of target atoms, and depositing a neutral target atom (or molecule) on the substrate to form a film. The secondary electrons are influenced by the magnetic field's Lorentz magnetic force during acceleration to the substrate, and are trapped in the plasma region near the target surface. The plasma density in the region is high, and the secondary electrons are surrounded by the magnetic field. The target surface makes a circular motion. The movement path of this electron is very long. During the movement, it continuously collides with argon atoms and ionizes a large number of argon ions to bombard the target. After many collisions, the energy of the electrons gradually decreases, breaking away from the bondage of magnetic lines. , away from the target, and finally deposited on the substrate.

Magnetron sputtering is the use of magnetic field to restrain and extend the movement path of electrons, change the movement direction of electrons, increase the ionization rate of working gas and effectively use the energy of electrons. The home of the electrons is not only the substrate, but also the vacuum chamber wall and the target anode. However, the substrate is generally at the same potential as the vacuum chamber and the anode. The interaction between the magnetic field and the electric field (E X B drift) makes a single electron orbit appear as a three-dimensional spiral, rather than just moving around the target surface. As for the target-surface sputtering profile, the magnetic field lines of the target magnetic field have a circumferential shape. Different lines of magnetic force distribution will have a great relationship to film formation. Magnetron sputtering, multi-arc plated target sources, ion sources, and plasma sources that operate under the E X B shift mechanism operate under sub-principles. The difference is the direction of the electric field, voltage and current.